Capacitorless DRAM: A DRAM design that eliminates the need for capacitors, allowing for smaller and more efficient memory cells. Grain Boundary (GB): The interface between two grains, or ...

presents a novel dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C ...

Embedded Dynamic Random Access Memory (eDRAM) is a type of memory technology that combines the benefits of dynamic random access memory with the compactness required for integration into chips.

The flash memory used for solid state drives (SSDs) and USB drives also stores bits in cells; however, when the power is turned off, the memory cells retain their content (see flash memory).

LPDDR interface for DRAM application;; SMIC 55nm Logic Low Leakage 1P10M Salicide 1.2V/1.8V/2.5V Process; ; Cell Size (Width * height ... The Ziptilion Bandwidth IP accelertes the main memory ...

While flash memory has made significant strides in capacity ... One approach to optimizing DRAM cells involves shrinking feature sizes through advanced lithography techniques.

San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...

A non-volatile, random access memory (RAM) technology that was designed to replace flash memory and, ultimately, DRAM memory ... in which the bit cell is either in an unstructured "amorphous ...

For something as timing-critical as a memory board, this turned out to be way harder than he’d expected. First off, he had already made things difficult for himself by choosing DRAM rather than ...