CAAC‐IGZO FETs control the electron current across source and drain (S/D) regions formed in CAAC‐IGZO, using a gate field through an insulating film. Sensor pixels using CAAC‐IGZO FETs can improve the ...

Crystalline IGZO FETs, which are formed using ceramic sputtering targets, are the first case of mass‐produced metal–oxide–semiconductor FETs (MOSFETs) with an oxide semiconductor as an active layer.