While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...
Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.
The aim is to provide an introduction to the theoretical and practical aspects of RF and microwave circuit design. This includes a detailed study of RF transistor amplifier design, covering RF ...
The aim is to provide an introduction to the theoretical and practical aspects of RF and microwave circuit design. This includes a detailed study of RF transistor amplifier design, covering RF ...
As with all of Guerrilla RF's bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) ...
Further, the simplicity of the pixel models (when compared to frequently encountered analog components such as amplifiers, oscillators ... to maintain consistent testbenches between the ASI and ...