The use of gallium nitride for wide applications was so significant that it merited three Japanese scientists being awarded the Nobel Prize for Physics in 2014. Gallium nitride has remarkable ...

This chapter is a general introduction to the properties and applications of gallium nitride (GaN) and related materials. In the first part, after an historical background on the relevant milestones ...

Abstract: Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages ...

String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages ...

gallium nitride, gallium oxide, gallium phosphide, gallium selenide and indium gallium arsenide. They will also apply to six germanium products: germanium dioxide, germanium epitaxial growth ...

Aethercomm Model Number SSPA 0.020-6.000-35 is a high power, super broadband, Gallium Nitride RF amplifier that operates from 20 MHz to 6000 MHz. This PA is ideal for broadband military platforms as ...