Self-aligned Ti and Co silicides for high performance sub-0.18 …
1998年5月4日 · SALICIDES are a key factor for scaling of high-performance CMOS devices. They are used to lower sheet resistance of gate and source/drain regions, contact resistance and …
Silicides have been used in self-aligned (SALICIDE) processes for several genera-tions of complementary metal-oxide semiconductor (CMOS) devices, to reduce the sheet resistance …
Currently, salicide processes, such as titanium silicide (TiSiz) and cobalt suicide (CoSi2), are widely used in advanced CMOS technologies. However, only CoSi2 salicide process is …
Salicides: materials, scaling and manufacturability issues for …
2000年1月1日 · Self-aligned silicides (salicides) [1], [2], [3] play a critical role in high performance CMOS technologies, serving both as a means of achieving low sheet resistance of gate, …
Advanced salicides for 0.10 μm CMOS: Co salicide processes with …
1998年11月2日 · In this paper we present an overview of the development of advanced Ti and Co salicide processes, with implementations into a high performance 0.10 μm complementary …
A novel nickel SALICIDE process technology for CMOS ... - IEEE …
A novel nickel self-aligned silicide (SALICIDE) process technology has been developed for CMOS devices with physical gate length of sub-40 nm. The excess silicidation problem due to edge …
a Prospective Material for Contacts with Silicon - Nature
2016年5月23日 · In particular, the self-aligned silicide (SALICIDE) technology free of lithographic patterning processes is commonly employed for manufacturing ultra-large-scale integration …
(PDF) Nickel SALICIDE process technology for CMOS
2006年1月1日 · As CMOS technologies move into the 90 nm node and beyond, nickel (Ni) self-aligned suicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication.
Applications of Ni-based silicides to 45 nm CMOS and Beyond
2004年9月1日 · This paper presents an overview of Ni-alloy (Ni, Ni-Pt and Ni-Ta) silicide development for the 45 nm node and beyond, including applications to self-aligned silicide …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
2017年3月3日 · A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified on wafer-scale and a high uniformity for the …
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