TSVs used by stacked DRAM-dice in combination with a High Bandwidth Memory (HBM) interface. In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection that passes completely through a silicon wafer or die.

Relying on its 12-layer 3D-TSV technology, Samsung will offer the highest DRAM performance for applications that are data-intensive and extremely high-speed.

Relying on its 12-layer 3D-TSV technology, Samsung will offer the highest DRAM performance for applications that are data-intensive and extremely high-speed.

2015年11月26日 · Samsung announced its TSV DDR4 DRAM in 128GB RDIMM modules for the first time in the industry, which will bring new heights to memory solutions for servers and data centers. The three most important benefits of this new technology include:

By introducing 3D TSV stacking in their latest 64GB DDR4, Samsung allows this technology to enter in the main stream. This registered dual Inline memory module (RDIMM) includes 36 DDR4 DRAM chips (ref. K4AAG045WD), each of which consists of four 4Gb DDR4 DRAM dies (Ref. K4A4G085WD).

2019年10月7日 · Samsung’s 12-layer DRAM KGSDs (known good stack die) will feature 60,000 TSV holes which is why the manufacturer considers its technology one of the most challenging packaging for mass...

TSV Interface for DRAM This topic is Thru Silicon Via interface for DRAM. This part will explain why TSV is necessary in DRAM, the advantages of DRAM with TSV, the TSV DRAM types and the issues and solutions for the TSV DRAM. 5.1 The Need for TSV in DRAM Figure 5.1 shows the DRAM data rate/pin trends. From 200 Mb/s/pin to 7 Gb/s/pin,