In an electron beam lithography system used for "drawing" features on a semiconductor wafer, the electron energy is 10 keV. The electrons are focused and then impinge upon the wafer a distance of 1  mm away from the aperture. Calculate the smallest feature size that can be drawn by such an e-beam system. | Numerade
In an electron beam lithography system used for "drawing" features on a semiconductor wafer, the electron energy is 10 keV. The electrons are focused and then impinge upon the
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