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Given that an ideal transistor has an emitter efficiency of 0.999 and the collector-base leakage current is 10 μA, calculate the active region emitter current due to holes if IB=0. | Numerade

Given that an ideal transistor has an emitter efficiency of 0.999 and the collector-base leakage current is 10 μA, calculate the active region emitter current due to holes if IB=0. | Numerade

2022年2月7日

in the circuit shown below what is the output voltage vout if a silicon transistor q and an ideal op amp are used 14627

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The transistor shown in Fig. 2.76 is connected in the circuit shown in Fig. 2.77. The gate is grounded, the substrate is connected to -1.5 V, and the drain is open circuited. An ideal current source is tied to the source, and this source has a value of zero for t0. The source and drain are at an initial voltage of 1.5 V at t=0. Sketch the voltage at the source and drain from t= 0 until the drain voltage reaches -1.5 V. For simplicity, assume that the source-substrate and drainsubstrate capac

The transistor shown in Fig. 2.76 is connected in the circuit shown in Fig. 2.77. The gate is grounded, the substrate is connected to -1.5 V, and the drain is open circuited. An ideal current source is tied to the source, and this source has a value of zero for t0. The source and drain are at an initial voltage of 1.5 V at t=0. Sketch the voltage at the source and drain from t= 0 until the drain voltage reaches -1.5 V. For simplicity, assume that the source-substrate and drainsubstrate capac

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